TSHG8400 - High Speed Infrared Emitting Diode

Product Overview

Vishay Siliconix

Datasheet Details

Part number	TSHG8400
Manufacturer	Vishay Siliconix
File Size	159.25 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG8400 Datasheet
Additional preview pages of the TSHG8400 datasheet.

Product details

Description

TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Infrared radiation source for operation with CMOS cameras (illumination) High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG8400 Ie (mW/sr) 70 ϕ (deg) ± 22 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG840

Features

Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC an.

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Published: Feb 2, 2012 |