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SiHFU224 - Power MOSFET

Download the SiHFU224 datasheet PDF. This datasheet also covers the SiHFR224 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Surface Mount (IRFR224, SiHFR224).
  • Straight Lead (IRFU224, SiHFU224).
  • Available in Tape and Reel.
  • Fast Switching.
  • Ease of Paralleling.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR224_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Vishay

Part Number Description
SiHFU220 Power MOSFET
SiHFU210 Power MOSFET
SiHFU214 Power MOSFET
SiHFU014 Power MOSFET
SIHFU020 (SIHFR020 / SIHFU020) Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.