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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
S G
GS
GD S
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
-400
VGS = -10 V
7.0
13
3.2
5.0
Single
FEATURES
• Advanced process technology
• Fully avalanche rated
• Surface-mount (IRFR9310, SiHFR9310)
• Straight lead (IRFU9310, SiHFU9310)
• P-channel • Fast switching
Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.