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SiHFR210 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Surface Mount (IRFR210, SiHFR210).
  • Straight Lead (IRFU210, SiHFU210).
  • Available in Tape and Reel.
  • Fast Switching.
  • Ease of Paralleling.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.