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SiHFP27N60K - Power MOSFET

Key Features

  • 600 0.18.
  • Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.

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IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 56 86 Single D FEATURES 600 0.18 • Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability • Lead (Pb)-free Available www.DataSheet4U.