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SiHFP064 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 60 0.009.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On- Resistance Very Low Thermal Resistance Isolated Central Mounting Hole 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFP064, SiHFP064 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 190 55 90 Single D FEATURES 60 0.009 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On- Resistance Very Low Thermal Resistance Isolated Central Mounting Hole 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.