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SiHFL110 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Surface-mount.
  • Available in tape and reel.
  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Fast switching.
  • Ease of paralleling Available.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com IRFL110, SiHFL110 Vishay Siliconix Power MOSFET D SOT-223 D G S D G S N-Channel MOSFET Marking code: FB PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.54 FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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