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SiHFIBC40G - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • 600 1.2 Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz).
  • Dynamic dV/dt Rating.
  • Lead (Pb)-free Available.
  • Available RoHS.

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Full PDF Text Transcription

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IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single D FEATURES 600 1.2 Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating • Lead (Pb)-free Available • • • • Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
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