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SiHFI734G - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Key Features

  • 450 1.2.
  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Dist. 4.8 mm.
  • Dynamic dV/dt.
  • Low Thermal Resistance.
  • Lead (Pb)-free RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 45 6.6 24 Single D FEATURES 450 1.2 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Dynamic dV/dt • Low Thermal Resistance • Lead (Pb)-free RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.