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SiHFBC30S - Power MOSFET

Download the SiHFBC30S datasheet PDF. This datasheet also covers the SiHFBC30L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • 600 2.2.
  • Surface Mount (IRFBC30S, SiHFBC30S).
  • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L).
  • Available in Tape and Reel (IRFBC30S, SiHFBC30S).
  • Dynamic dV/dt Rating.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFBC30L_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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