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SiHFB18N50K - Power MOSFET

Key Features

  • 500 0.26.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Full PDF Text Transcription (Reference)

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IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 120 34 54 Single D FEATURES 500 0.