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SiHFB17N60K - Power MOSFET

Features

  • 600 0.35.
  • Smaller TO-220 Package.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single D FEATURES 600 0.35 • Smaller TO-220 Package • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT www.DataSheet4U.
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