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SiHF840LC - Power MOSFET

Description

This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

Features

  • Ultra Low Gate Charge.
  • Reduced Gate Drive Requirement.
  • Enhanced 30 V VGS Rating.
  • Reduced Ciss, Coss, Crss.
  • Extremely High Frequency Operation.
  • Repetitive Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet Details

Part number SiHF840LC
Manufacturer Vishay Siliconix
File Size 273.98 KB
Description Power MOSFET
Datasheet download datasheet SiHF840LC Datasheet
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Power MOSFET IRF840LC, SiHF840LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single TO-220AB D 0.85 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs.
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