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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
www.vishay.com
Vishay Siliconix
Power MOSFET
D
I2PAK (TO-262)
D2PAK (TO-2
G
SD
D G
S
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 6.3 11 Single
1.40
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free
Note a. See device orientation
D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF
FEATURES
• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
• Fully characterized capacitance and avalanche voltage and current
Available
• Effective Coss specified • Material categorization: for definitions of compliance
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