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SiHF730A - Power MOSFET

Features

  • Low Gate Charge Qg results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Power MOSFET IRF730A, SiHF730A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration Single 1.0 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr.
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