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SUP90P06-09L - P-Channel MOSFET

Features

  • D TrenchFETr Power MOSFET ID (A)c.
  • 90.
  • 90 rDS(on) (W) 0.0093 @ VGS =.
  • 10 V 0.0118 @ VGS =.
  • 4.5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUP90P06-09L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −60 FEATURES D TrenchFETr Power MOSFET ID (A)c −90 −90 rDS(on) (W) 0.0093 @ VGS = −10 V 0.0118 @ VGS = −4.5 V APPLICATIONS D DC/DC Primary Switch D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives TO-220AB S G DRAIN connected to TAB G D S Top View Ordering Information: SUP90P06-09L—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentc (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.
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