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SUP80N15-20L
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
150
rDS(on) (W)
0.020 @ VGS = 10 V 0.022 @ VGS = 4.5 V
TO-220AB
ID (A)
80 76
FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold APPLICATIONS D Primary Side Switch
D
DRAIN connected to TAB
G
GD S Top View Ordering Information: SUP80N15-20L
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TC = 25_C TC = 125_C
L = 0.
SUP80N15-20L Datasheet
