SUM09MN20-270 - N-Channel 200-V (D-S) 175C MOSFET

Vishay Siliconix

Datasheet Details

Part number	SUM09MN20-270
Manufacturer	Vishay Siliconix
File Size	39.57 KB
Description	N-Channel 200-V (D-S) 175C MOSFET
Datasheet	SUM09MN20-270 Datasheet
Additional preview pages of the SUM09MN20-270 datasheet.

📁 Similar Datasheet

SUM09N20-270 - N-Channel MOSFET (Vishay)
SUM10250E - N-Channel MOSFET (Vishay)
SUM110N04-2m1P - N-Channel 40-V (D-S) MOSFET (Vishay)
SUM110N06-05L - N-Channel MOSFET (Vishay)
SUM110N06-3m4L - N-Channel MOSFET (Vishay)
SUM110N06-3m4L - N-Channel MOSFET (Vishay)
SUM110N08-07P - N-Channel MOSFET (Vishay)
SUM110P08-11 - P-Channel MOSFET (Vishay)
SUM110P08-11L - P-Channel MOSFET (Vishay)
SUM120N04-1m7L - N-Channel 40-V (D-S) MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SUM110N02-03P - N-Channel 20-V (D-S) 175 C MOSFET
SUM110N03-03 - N-Channel 30-V (D-S) 175C MOSFET
SUM110N03-03P - N-Channel 30-V (D-S) 175C MOSFET
SUM110N04-03 - N-Channel 40-V (D-S) 200C MOSFET
SUM110N04-04 - N-Channel 40-V (D-S) 175C MOSFET
SUM110N04-05H - N-Channel MOSFET
SUM110N04-2M7H - N-Channel 40-V (D-S) 175C MOSFET
SUM110N06-04L - N-Channel 60-V (D-S) 200C MOSFET

Full PDF Text Transcription

Click to expand full text

SUM09N20-270 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (W) 0.270 @ VGS = 10 V 0.300 @ VGS = 6 V ID (A) 9 8.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package D TO-263 G G D S S N-Channel MOSFET Top View Ordering Information: SUM09N20-270 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 200 "20 9 5.2 10 7 2.45 60b 3.

Published: Sep 28, 2005 |