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SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V
TO-252
ID (A)a 50 50
FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
D
Drain Connected to Tab
GDS Top View
Ordering Information: SUD50N06-09L-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.
SUD50N06-09L Datasheet
