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SUD45N05-20L - N-Channel MOSFET

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Features

  • ID (A)a 30 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD45N05-20L N-Channel MOSFET.

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SUD45N05-20L Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 50 FEATURES ID (A)a 30 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD45N05-20L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction)a Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range w w .D w t a S a TC = 25_C TC = 100_C L = 0.
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