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SS10PH45 - High Current Density Surface Mount Schottky Rectifier

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Guardring for overvoltage protection.
  • High barrier technology, TJ = 175 °C maximum 1 2.
  • Low leakage current.
  • Meets MSL level 1, per LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cath.

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Datasheet Details

Part number SS10PH45
Manufacturer Vishay
File Size 155.48 KB
Description High Current Density Surface Mount Schottky Rectifier
Datasheet download datasheet SS10PH45 Datasheet

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Full PDF Text Transcription

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www.DataSheet.co.kr New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 10 A IR TJ max. 10 A 45 V 200 A 20 mJ 0.56 V 5.
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