Datasheet4U Logo Datasheet4U.com

SS10P4C - (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers

Download the SS10P4C datasheet PDF. This datasheet also covers the SS10P3C variant, as both devices belong to the same (ss10p3c / ss10p4c) high current density surface mount schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020.
  • AEC-Q101 qualified.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SS10P3C_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SS10P4C
Manufacturer Vishay
File Size 156.12 KB
Description (SS10P3C / SS10P4C) High Current Density Surface Mount Schottky Barrier Rectifiers
Datasheet download datasheet SS10P4C Datasheet

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr New Product SS10P3C, SS10P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 5 A TJ max. 2 x 5.0 A 30 V, 40 V 200 A 20 mJ 0.
Published: |