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SIHFS11N50A - Power MOSFET

Features

  • Low Gate Charge Qg results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness.
  • Fully Characterized Capacitance and Avalanche Voltage and Current Available.
  • Effective Coss Specified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For.

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Full PDF Text Transcription

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www.vishay.com IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 D2PAK (TO-263) D G FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Available • Effective Coss Specified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
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