SIHFPE50 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

800 1.2.
Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Isolated Central Mounting Hole.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Lead (Pb)-free Available Available RoHS.

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SIHFPE50 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHFPE50
Manufacturer	Vishay
File Size	1.56 MB
Description	Power MOSFET
Datasheet	SIHFPE50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 200 24 110 Single D FEATURES 800 1.2 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.