Datasheet4U Logo Datasheet4U.com

SIC762CD - Integrated DrMOS Power Stage

General Description

The SiC762CD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.

The device complies with the Intel DrMOS standard for desktop and server Vcore power stages.

Key Features

  • S.
  • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC.
  • Enables Vcore switching at 1 MHz.
  • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions.
  • Low ringing on the VSWH pin reduces EMI.
  • Pin compatible with DrMOS 6 x 6 version 3.0.
  • Tri-state PWM input function prevents negative output voltage swing.
  • 5 V logic levels on PWM.
  • MOSFET threshold voltage optimized for 5 V driver bias supply.

📥 Download Datasheet

Datasheet Details

Part number SIC762CD
Manufacturer Vishay
File Size 617.79 KB
Description Integrated DrMOS Power Stage
Datasheet download datasheet SIC762CD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiC762CD Vishay Siliconix Integrated DrMOS Power Stage DESCRIPTION The SiC762CD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC762CD delivers up to 35 A continuous output current and operates from an input voltage range of 3 V to 27 V. The integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 24 V. The device can also deliver very high power at 5 V output for ASIC applications. The SiC762CD incorporates an advanced MOSFET gate driver IC.