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Si9802DY
Vishay Siliconix
Dual N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V
ID (A)
"4.5 "3.8
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
20 "12 "4.5 "3.6 "25 "1.7 2
Unit
V
A
W 1.
SI9802DY Datasheet
