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SI8904EDB - Bi-Directional N-Channel MOSFET

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Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.

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Datasheet Details

Part number SI8904EDB
Manufacturer Vishay Siliconix
File Size 238.63 KB
Description Bi-Directional N-Channel MOSFET
Datasheet download datasheet SI8904EDB Datasheet
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www.DataSheet4U.com SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
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