Datasheet4U Logo Datasheet4U.com

SI8901EDB - Bi-Directional P-Channel MOSFET

Datasheet Summary

Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive.

📥 Download Datasheet

Datasheet preview – SI8901EDB

Datasheet Details

Part number SI8901EDB
Manufacturer Vishay Siliconix
File Size 247.05 KB
Description Bi-Directional P-Channel MOSFET
Datasheet download datasheet SI8901EDB Datasheet
Additional preview pages of the SI8901EDB datasheet.

📁 Similar Datasheet

  • Si8901 - Ring Demodulator/Balanced Mixer (Siliconix)
  • Si8901 - ISOLATED MONITORING ADC (Skyworks)
  • SI8901 - ISOLATED MONITORING ADC (Silicon Laboratories)
  • Si8901A - DMOS Double-Balanced Mixers (Siliconix)
  • Si8901CY - DMOS Double-Balanced Mixers (Siliconix)
  • Si8900 - ISOLATED MONITORING ADC (Skyworks)
  • SI8900 - ISOLATED MONITORING ADC (Silicon Laboratories)
  • Si8902 - ISOLATED MONITORING ADC (Skyworks)
  • SI8902 - ISOLATED MONITORING ADC (Silicon Laboratories)
  • SI8902AEDB - N-channel MOSFET (Vishay)
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Published: |