SI7601DN - P-Channel 20-V (D-S) MOSFET

Datasheet Summary

Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.

Vishay Siliconix

📥 Download Datasheet

Datasheet Details

Part number	SI7601DN
Manufacturer	Vishay Siliconix
File Size	259.88 KB
Description	P-Channel 20-V (D-S) MOSFET
Datasheet	SI7601DN Datasheet
Additional preview pages of the SI7601DN datasheet.

📁 Similar Datasheet

SI7600 - 3-Phase Stepper Motor Driver ICs (Sanken electric)
SI7613DN - MOSFET (Vishay)
SI7615ADN - P-Channel MOSFET (Vishay)
SI7615CDN - MOSFET (Vishay)
SI7615DN - MOSFET (Vishay)
SI7617DN - MOSFET (Vishay)
SI7617DN - P-Channel 30V MOSFET (VBsemi)
Si7634BDP - N-channel MOSFET (Vishay)
Si7635DP - P-Channel MOSFET (Vishay)
Si7636DP - N-channel MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SI7664DP - N-Channel 30-V (D-S) MOSFET
SI7102DN - N-Channel MOSFET
SI7106DN - N-Channel MOSFET
SI7108DN - N-Channel MOSFET
SI7113DN - P-Channel MOSFET
SI7114ADN - N-Channel MOSFET
SI7115DN - P-Channel MOSFET
SI7116DN - N-Channel 40-V (D-S) Fast Switching MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com SPICE Device Model Si7601DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Published: Feb 9, 2007 |