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SI6562CDQ - MOSFET

Key Features

  • Qg (Typ. ) 6.7 nC.
  • Halogen-free.
  • TrenchFET® Power MOSFETs 5.2a - 6.1a - 5.0a RoHS.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.022 at VGS = 4.5 V 0.036 at VGS = 2.5 V 0.030 at VGS = - 4.5 V 0.045 at VGS = - 2.5 V ID (A) 6.7 a FEATURES Qg (Typ.) 6.7 nC • Halogen-free • TrenchFET® Power MOSFETs 5.2a - 6.1a - 5.