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P-Channel 2.5-V (G-S) MOSFET
Si5443DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.065 at VGS = - 4.5 V - 20 0.074 at VGS = - 3.6 V
0.110 at VGS = - 2.5 V
ID (A) ± 4.9 ± 4.6 ± 3.8
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs: 2.5 V Rated
1206-8 ChipFET®
1
D
D D
D D
D S
G
Bottom View
Marking Code
BB XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si5443DC-T1-E3 (Lead-(Pb)-free) Si5443DC-T1-GE3 (Lead-(Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °C
ID
± 4.9 ± 3.5
± 3.