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SI4726CY - N-Channel MOSFET

Description

The Si4726CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies.

It’s purpose is to simplify the use of n-channel MOSFETs in high frequency buck regulators.

Features

  • D D D D 4.5- to 20-V Operation Driver Impedance.
  • 3 W Undervoltage Lockout Fast Switching Times (30 ns typ. ) D D D D 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side: 0.0065 W @ VDD = 4.5 V Switching Frequency: 250 kHz to 1 MHz.

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Datasheet Details

Part number SI4726CY
Manufacturer Vishay
File Size 103.81 KB
Description N-Channel MOSFET
Datasheet download datasheet SI4726CY Datasheet

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www.DataSheet4U.com Si4726CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times (30 ns typ.) D D D D 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V Low Side: 0.0065 W @ VDD = 4.5 V Switching Frequency: 250 kHz to 1 MHz DESCRIPTION The Si4726CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It’s purpose is to simplify the use of n-channel MOSFETs in high frequency buck regulators. This device is design to be used with any single output PWM IC or ASIC to produce a highly efficient low cost synchronous rectifier converter.
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