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Si4174DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0095 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 17 8 nC 14.5 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS
• Notebook CPU Core - High-Side Switch
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D G D
D
S Ordering Information: Si4174DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 17 13.