Datasheet4U Logo Datasheet4U.com

SI3460DV - N-Channel 20-V (D-S) MOSFET

Features

  • ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number SI3460DV
Manufacturer Vishay
File Size 65.13 KB
Description N-Channel 20-V (D-S) MOSFET
Datasheet download datasheet SI3460DV Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI3460 IEEE 802.3af PSE INTERFACE AND DC-DC CONTROLLER Silicon Laboratories
SI3461 SINGLE-PORT IEEE 802.3AT POE/POE PSE INTERFACE Silicon Laboratories
SI3462 SINGLE-PORT IEEE 802.3AT POE/POE+ PSE INTERFACE Silicon Laboratories
SI3400 FULLY-INTEGRATED 802.3-COMPLIANT PD INTERFACE AND SWITCHING REGULATOR Silicon Laboratories
SI3400A N-Channel MOSFET MCC

Other Datasheets by Vishay

Part Number Description
SI3460DDV N-Channel MOSFET
SI3460BDV N-Channel MOSFET
SI3464DV N-Channel MOSFET
SI3465DV P-Channel MOSFET
SI3467DV P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "8 6.8 5.4 20 1.7 2.0 1.3 Steady State Unit V 5.1 4.1 A 0.
Published: |