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Si1407DL
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New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.130 @ VGS = –4.5 V –12 12 0.170 @ VGS = –2.5 V 0.225 @ VGS = –1.8 V
ID (A)
–1.8 –1.5 –1.3
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code OC XX YY Lot Traceability and Date Code Part # Code
D
2
5
D
G
3
4
S
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID –1.4 IDM IS PD TJ, Tstg –0.8 0.625 0.400 –55 to 150 –5 –0.8 0.568 W 0.295 _C –1.