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Si1405DL
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New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.125 @ VGS = –4.5 V –8 8 0.160 @ VGS = –2.5 V 0.210 @ VGS = –1.8 V
ID (A)
"1.8 "1.6 "1.4
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code D 2 5 D OB XX YY Lot Traceability and Date Code G 3 4 S Part # Code
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C ID IDM IS PD TJ, Tstg –0.8 0.625 0.400 –55 to 150
Symbol
VDS VGS
5 secs
–8
Steady State
Unit
V
"8 "1.8 "1.5 "5 –0.8 0.