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IRFU9310 - Power MOSFET

Download the IRFU9310 datasheet PDF. This datasheet also covers the IRFR9310 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced process technology.
  • Fully avalanche rated.
  • Surface-mount (IRFR9310, SiHFR9310).
  • Straight lead (IRFU9310, SiHFU9310).
  • P-channel.
  • Fast switching Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR9310_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU9310 Power MOSFET IRF
IRFU9310PBF Power MOSFET International Rectifier
IRFU9010 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET Samsung Electronics
IRFU9010 P-Channel Transistor International Rectifier
IRFU9010 Power MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
IRFU9014 Power MOSFET
IRFU9020 Power MOSFET
IRFU9022 Power MOSFET
IRFU9024 Power MOSFET
IRFU9110 Power MOSFET

Full PDF Text Transcription

Click to expand full text
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -400 VGS = -10 V 7.0 13 3.2 5.0 Single FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.
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