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IRFR9310 - Power MOSFET

Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced process technology.
  • Fully avalanche rated.
  • Surface-mount (IRFR9310, SiHFR9310).
  • Straight lead (IRFU9310, SiHFU9310).
  • P-channel.
  • Fast switching Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -400 VGS = -10 V 7.0 13 3.2 5.0 Single FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.
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