IRFB17N60K
FEATURES
- Smaller TO-220 Package
.. VDS (V)
RDS(on) (Ω)
Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic d V/dt Ruggedness
Available
Ro HS-
PLIANT
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Lead (Pb)-free Available
TO-220
APPLICATIONS
- Switch Mode Power Supply (SMPS)
G S G D S N-Channel MOSFET
- Uninterruptible Power Supply
- High Speed Power Switching
- Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package Lead (Pb)-free Sn Pb TO-220 IRFB17N60KPb F Si HFB17N60K-E3 IRFB17N60K Si HFB17N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS...
