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BAR63V-02V - RF PIN Diode

Description

Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning.

As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation.

Features

  • Low forward resistance.
  • Space saving SOD-523 package with low series inductance.
  • Very small reverse capacitance.
  • Lead (Pb)-free component.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC RF-signal tuning Mobile, wireless and TV-.

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📁 Similar Datasheet

Part Number Description Manufacturer
BAR63 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens Semiconductor Group
BAR63 Silicon PIN Diodes Infineon Technologies AG
BAR63-02L Silicon PIN Diodes Infineon Technologies AG
BAR63-02V Silicon PIN Diodes Infineon Technologies AG
BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) Siemens Semiconductor Group

Other Datasheets by Vishay

Part Number Description
BAR63V-04W RF PIN Diode

Full PDF Text Transcription

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www.DataSheet4U.com BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems.
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