VS6613GE
Features
- Enhancement mode
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche test
60V/46A N-Channel Advanced Power MOSFET
V DS
R DS(on),Typ@ VGS=10 V
8.3 mΩ
R DS(on),Typ@ VGS=4.5 V
14 mΩ
PDFN3333
Part ID VS6613GE
Package Type PDFN3333
Marking 6613GE
Packing 5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS IS ID IDM IDSM EAS PD
Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
Avalanche energy, single pulsed ②
Maximum power dissipation
PDSM
Maximum power dissipation ③
TSTG,TJ Storage and Junction Temperature Range
Thermal Characteristics
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
TC =25°C TC =100°C
TA=25°C TA=70°C
Symbol
Parameter
Typical
RθJC...
