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VST018N10MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VST018N10MS 100V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 14 mΩ 15 mΩ 60 A TO-220AB Part ID VST018N10MS Package Type TO-220AB Marking 018N10M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specifi.

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Datasheet Details

Part number VST018N10MS
Manufacturer Vanguard Semiconductor
File Size 311.53 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VST018N10MS Datasheet

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Full PDF Text Transcription

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST018N10MS 100V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 14 mΩ 15 mΩ 60 A TO-220AB Part ID VST018N10MS Package Type TO-220AB Marking 018N10M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C IAS Avalanche Current Max L=0.
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