VST008N10HS Datasheet | Vanguard Semiconductor

Features - N-Channel，10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10 V - Vito MOS® ⅡTechnology - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 100V/105A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 6.2 mΩ I D 105 A TO-220AB Part ID VST008N10HS Package Type TO-220AB Marking 008N10H Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG , TJ Storage and junction temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient Rat...