VSR090N10MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance @ VGS=4.5 V - Fast Switching - Pb-free lead plating; Ro HS pliant 100V/5A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 100 V 70 mΩ 75 mΩ 5A SOT89 Part ID Package Type SOT89 Marking 090N10 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage and operating temperature range TC =25°C TA =70°C TC =25°C TC =25°C TC =25°C Thermal characteristics RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction to Case Rating 100 ±20 5 3.2 20 1.25 5 150 -55 to 175 100 15 Unit V V A A A W A...