VSP003N10HS-G
Features
- N-Channel，10V Logic Level Control
- Enhancement mode
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche Tested
- Pb-free lead plating; Ro HS pliant
- VSP003N10HS-G
100V/125A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V ID
100 V 3.8 mΩ 125 A
PDFN5x6
Part ID VSP003N10HS-G
Package Type PDFN5x6
Marking 003N10H
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested ①
IDSM
Continuous drain current @VGS=10V
Avalanche energy, single pulsed ②
PDSM
Maximum power dissipation Maximum power dissipation ③
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter...
