VSP003N06MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/125A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 2.5 mΩ 4.3 mΩ 125 A PDFN5x6 Part ID VSP003N06MS-G Package Type PDFN5x6 Marking 003N06M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter...