Datasheet4U Logo Datasheet4U.com

VSO025N10MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，Logic level 5V.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • Pb-free lead plating; RoHS compliant VSO025N10MS 100V/9A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 20 mΩ 22 mΩ ID 9 A SOP8 Part ID VSO025N10MS Package Type SOP8 Marking 025N10M Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drai.

📥 Download Datasheet

Datasheet Details

Part number VSO025N10MS
Manufacturer Vanguard Semiconductor
File Size 742.20 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSO025N10MS Datasheet

📁 Similar Datasheet

  • VSOF5 - LSI Assembly (Rohm)
  • VSOP38336 - Preamplifier (Vishay)
  • VSOP38338 - Preamplifier (Vishay)
  • VSOP58436 - IR Remote Control Preamplifier (Vishay)
  • VSOP58438 - IR Remote Control Preamplifier (Vishay)
  • VSOP584xx - Preamplifier Circuit (Vishay)
  • VSOP98260 - Preamplifier (Vishay)
  • VSOR - Dual-In-Line Resistor Networks (Vishay Siliconix)
  • VSORC - T-Filter Resistor/Capacitor Networks (Vishay Siliconix)
  • VSORC-AA - T-Filter Resistor/Capacitor Networks (Vishay Siliconix)
Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  N-Channel，Logic level 5V  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO025N10MS 100V/9A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 20 mΩ 22 mΩ ID 9 A SOP8 Part ID VSO025N10MS Package Type SOP8 Marking 025N10M Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C L=0.
Published: |