VSM012N06HS
Features
- N-Channel，Logic Level 10V
- Enhancement mode
- Very low on-resistance
- Fast Switching
- 100% Avalanche Tested
- Pb-free lead plating; Ro HS pliant
60V/55A N-Channel Advanced Power MOSFET
V DS
60 V
R @DS(on),TYP VGS=10 V
8.5 mΩ
I D 55 A
TO-263
Part ID VST012N06HS
Package Type TO-263
Marking 012N06H
Tape and reel information 800pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TA =100°C TC =25°C
L=0.1m H
IAS Avalanche Current, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TA =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient...
