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VSE008NE2LS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，3.3V Logic Level Control.
  • Low RDS(on) and High Efficiency.
  • Fast Switching.
  • Enhancement mode.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 25 V 5.8 mΩ 6.6 mΩ 55 A PDFN3333 Part ID VSE008NE2LS Package Type PDFN3333 Marking 008NE2L Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symb.

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Datasheet Details

Part number VSE008NE2LS
Manufacturer Vanguard Semiconductor
File Size 591.56 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSE008NE2LS Datasheet

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Full PDF Text Transcription

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Features  N-Channel，3.3V Logic Level Control  Low RDS(on) and High Efficiency  Fast Switching  Enhancement mode  100% Avalanche test  Pb-free lead plating; RoHS compliant VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 25 V 5.8 mΩ 6.6 mΩ 55 A PDFN3333 Part ID VSE008NE2LS Package Type PDFN3333 Marking 008NE2L Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=4.5V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=4.
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