Datasheet4U Logo Datasheet4U.com

VSD009N06MS-G - N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSD009N06MS-G 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 7.5 mΩ 12.5 mΩ 60 A TO-252 Part ID VSD009N06MS-G Package Type TO-252 Marking 009N06M Tape and reel information 2500pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR).

📥 Download Datasheet

Datasheet Details

Part number VSD009N06MS-G
Manufacturer Vanguard Semiconductor
File Size 571.35 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD009N06MS-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSD025N10MS N-Channel 100V MOSFET VBsemi

Other Datasheets by Vanguard Semiconductor

Part Number Description
VSD003N06HS N-Channel Advanced Power MOSFET
VSD004N03MS N-Channel Advanced Power MOSFET
VSD004P03MS P-Channel Advanced Power MOSFET
VSD005N03MS N-Channel Advanced Power MOSFET
VSD005N05LS N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD009N06MS-G 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 7.5 mΩ 12.
Published: |